TCAD Challenges for Heterostructure Microelectronics(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

• 論文の詳細を見る

• TCAD is gaining acceptance in the heterostructure industry This article discusses the specific challenges a device simulator roust manage to he a useful tool in designing and optimizing modern heterostructure devices Example simulation results are given for HEMTs and HBTs, illustrating the complex physical processes in heterostructure devices, such as nonlocal effects in carrier transport, lattice self-heating, hot-electron effects, traps, electron tunneling, and quantum transport.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• Fichtner Wolfgang

  Ise Integrated Systems Engineering Ag

• Mickevicius Rimvydas

  Integrated Systems Engineering Inc.

• WETTSTEIN Andreas

  ISE Integrated Systems Engineering AG

• LYUMKIS Eugeny

  Integrated Systems Engineering, Inc.

• PENZIN Oleg

  Integrated Systems Engineering, Inc.

• POLSKY Boris

  Integrated Systems Engineering, Inc.

• SAYED Karim

  Integrated Systems Engineering, Inc.

• Penzin Oleg

  Integrated Systems Engineering Inc.

• Lyumkis Eugeny

  Integrated Systems Engineering Inc.

• Sayed Karim

  Integrated Systems Engineering Inc.

• Polsky Boris

  Integrated Systems Engineering Inc.

関連論文

• Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model(the IEEE International Conference on SISPAD '02)
• Simulation of RF Noise in MOSFETs Using Different Transport Models
• TCAD Challenges for Heterostructure Microelectronics(Heterostructure Microelectronics with TWHM2003)

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