Simulation of RF Noise in MOSFETs Using Different Transport Models

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概要

• 論文の詳細を見る

• RF noise in quarter-micron nMOSFETs is analysed on the device level based on Shockley's impedance field method. The impact of different transport models and physical parameters is discussed in detail. Well-calibrated drift-diffusion and energy-balance models give wry similar results for noise current spectral densities and noise figures. We show by numerical simulations with the general-purpose device simulator DESSIS_<-ISE> that the hot-electron effect on RF noise is unimportant under normal operating conditions and that thermal substrate noise is dominant below 0.5GHz. The contribution of energy-current fluctuations to the terminal noise is found to be negligible. Application of noise sources generated in bulk full-band Monte Carlo simulations changes the noise figures considerably, which underlines the importance of proper noise source models for far-from-equilibrium conditions.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Bufler Fabian

  The Institut Fiir Integrierte Systeme

• Schenk A

  The Institut Fiir Integrierte Systeme

• Feudel Thomas

  Amd Saxony

• Schenk Andreas

  Institut Fur Integrierte Systeme Eth Zurich

• Fichtner W

  The Institut Fiir Integrierte Systeme

• Fichtner Wolfgang

  Institut Fur Integrierte Systeme Eth Zurich

• WETTSTEIN Andreas

  ISE Integrated Systems Engineering AG

• SCHMITHUSEN Bernhard

  Institut fur Integrierte Systeme,ETH Zurich

• ERLEBACH Axel

  ISE Integrated Systems Engineering AG

• BRUGGER Simon

  Institut fur Integrierte Systeme,ETH Zurich

• BUFLER Fabian

  Institut fur Integrierte Systeme,ETH Zurich

• Schmithusen Bernhard

  Institut Fur Integrierte Systeme Eth Zurich

• Brugger Simon

  Institut Fur Integrierte Systeme Eth Zurich

関連論文

• Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model(the IEEE International Conference on SISPAD '02)
• On Density-Gradient Modeling of Tunneling through Insulators(the IEEE International Coference on SISPAD '02)
• Simulation of RF Noise in MOSFETs Using Different Transport Models
• Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation(the IEEE International Conference on SISPAD '02)
• Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver (Special lssue on SISPAD'99)
• TCAD Challenges for Heterostructure Microelectronics(Heterostructure Microelectronics with TWHM2003)

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