On Density-Gradient Modeling of Tunneling through Insulators(<Special Issue>the IEEE International Coference on SISPAD '02)

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概要

• 論文の詳細を見る

• The density gradient (DG) model is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOS-FETs) and double barriers (RTDs) show the limitations of the DG model. For comparison, direct tunneling currents are calculated with the Schrodinger-Bardeen method and used as benchmark. The negative differential resistance (NDR) observed in simulating tunneling currents with the DG model turns out to be an artifact related to large density differences in the semiconductor regions. Such spurious NDR occurs both for single and double barriers and vanishes, if all semiconductor regions are equally doped.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Schenk Andreas

  Institut Fur Integrierte Systeme Eth Zurich

• Fichtner Wolfgang

  Institut Fur Integrierte Systeme Eth Zurich

• HOHR Timm

  Institut fur Integrierte Systeme,ETH Zurich

• WETTSTEIN Aadreas

  ISE Integrated Systems Engineering AG

• Hohr Timm

  Institut Fur Integrierte Systeme Eth Zurich

• Wettstein A

  Ise Integrated Systems Engineering Ag

関連論文

• Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model(the IEEE International Conference on SISPAD '02)
• On Density-Gradient Modeling of Tunneling through Insulators(the IEEE International Coference on SISPAD '02)
• Simulation of RF Noise in MOSFETs Using Different Transport Models

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