Three-Dimensional MMIC Technology on Silicon : Review and Recent Advances(Special Issue on Silicon RE Device & Integrated Circuit Technologies)
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概要
- 論文の詳細を見る
This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band lo noise amplifier presented in this paper.
- 社団法人電子情報通信学会の論文
- 2002-07-01
著者
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Piernas Belinda
Ntt Network Innovation Laboratories Ntt Corporation:(present Address)fujitsu Compound Semiconductor
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NISHIKAWA Kenjiro
NTT Network Innovation Laboratories, NTT Corporation
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TOYODA Ichihiko
NTT Network Innovation Laboratories, Wireless Systems Innovation Laboratory
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Toyoda Ichihiko
Ntt Network Innovation Laboratories Ntt Corporation
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KAMOGAWA Kenji
NTT DoCoMo, Inc.
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NISHIKAWA Kenjiro
NTT Wireless Systems Laboratories
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Kamogawa Kenji
Ntt Docomo Inc.
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Nishikawa Kenjiro
Ntt Network Innovation Laboratories
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Toyoda Ichihiko
NTT Network Innovation Laboratories, NTT Corporation
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Piernas Belinda
NTT Network Innovation Laboratories
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