Spin Electronic States of Wurtzite GaN Nanostructures
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概要
- 論文の詳細を見る
Spin electronic states of wurtzite GaN nanostructres were studied by using ab initio molecular orbital calculations. Two models of pyramidal GaN clusters were constructed with the cluster axes parallel to the crystallographic c axis in the wurtzite. The atom at the apex of the cluster is nitrogen or gallium. We computed the lowest energy spin electronic states, spin densities, static electric fields, highest occupied molecular orbitals, and lowest unoccupied molecular orbitals for both clusters. The spin multiplicities of the clusters were found to be 13 and 3, depending on whether the atom at the apex was nitrogen or gallium, respectively. The GaN clusters were spontaneously spin-polarized in the lowest-energy states. Highly spin-polarized states were induced by the unpaired electrons on the surfaces of the nanostructures.
- 社団法人日本磁気学会の論文
- 2000-04-15
著者
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Maruyama Tomohide
Faculty Of Engineering Hikkaido Tokai University
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Sawamura M.
CREST, JST, Nanoelectronics Laboratory, Faculty of Engineering, Hokkaido University
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Mukasa K.
CREST, JST, Nanoelectronics Laboratory, Faculty of Engineering, Hokkaido University
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Maruyama T.
Faculty of Engineering, Hokkaido Tokai University
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Mukasa K
Crest Jst Nanoelectronics Laboratory Faculty Of Engineering Hokkaido University:nanoelectronics Labo
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Mukasa K.
Graduate School Of Engineering Hokkaido University
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Sawamura M
Crest Jst Nanoelectronics Laboratory Faculty Of Engineering Hokkaido University:nanoelectronics Labo
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Mukasa K.
Crest Japan Science And Technology Corporation (jst)
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