Spin Electronic States of GaN Probes : Magnetism of Nanostructures
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概要
- 論文の詳細を見る
We conducted a preliminary study of the spin electronic states of GaN nanocrystal probes to show the mechanism of spin polarization in nanoscale materials. We constructed four cluster models for GaN tips in the zincblende structure and calculated the electruonics states, using the ab initio molecular orbital theory. The spin states varied as the proportion of polarized valence electrons ranged from 0% to 70%. It was found that at the pyramidal heads of the probes, the electron spins were polarized in the lowest energy states. Approximately 11% to 34% of electrons in the valence hand were spin-polarized in the proximity of the head, depending on the kind of atom at the apex and the crystallographic axis of the probe. These results indicate higher spin polarization than we suggested in our previous study [J. Mag. Soc. Jpn. 23, No. 1-2]. It seems that spin polarization grows as the difference of the electronegativities of the elements in a compound increases, and that it can be enhanced by a highly symmetric probe nanostucture.
- 社団法人日本磁気学会の論文
- 1999-04-15
著者
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澤村 誠
CREST科技団
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Maruyama Tomohide
Faculty Of Engineering Hikkaido Tokai University
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Sawamura M.
CREST, JST, Nanoelectronics Laboratory, Faculty of Engineering, Hokkaido University
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Mukasa K.
CREST, JST, Nanoelectronics Laboratory, Faculty of Engineering, Hokkaido University
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Maruyama T.
Faculty of Engineering, Hokkaido Tokai University
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武笠 幸一
Crest(jst):北海道大学大学院工学研究科
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Mukasa K
Crest Jst Nanoelectronics Laboratory Faculty Of Engineering Hokkaido University:nanoelectronics Labo
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Mukasa K.
Graduate School Of Engineering Hokkaido University
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Sawamura M
Crest Jst Nanoelectronics Laboratory Faculty Of Engineering Hokkaido University:nanoelectronics Labo
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Mukasa K.
Crest Japan Science And Technology Corporation (jst)
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丸山 倫英
Faculty of Engineering, Hokkaido Tokai University
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