Growth of MnAs on S- and Se-passivated GaAs substrates
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概要
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We have grown ferromagnetic MnAs thin films on S- and Se-passivated GaAs substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs (100) substrates were changed by the surface treatment. We found that on the clean and the Se-passivated surfaces, MnAs films grow by a layer-by-layer mode. In contrast, on the S-passivated surface MnAs grows by an island growth mode, and polycrystalline films are obtained. We also found that the magnetization of the MnAs film on Se-passivated surface is larger than that on clean and S-passivated surfaces.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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FUJIOKA H.
Department of Applied Chemistry, University of Tokyo
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OSHIMA M.
Department of Applied Chemistry, University of Tokyo
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Watanabe Y.
NTT Laboratories
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TANAKA M.
School of Nursing, Kagoshima Immaculate Heart University
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Ono K.
School of Engineering, The University of Tokyo
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Uragami T.
School of Engineering, The University of Tokyo
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Mizuguchi M.
School of Engineering, The University of Tokyo
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Fujioka H.
School of Engineering, The University of Tokyo
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Oshima M.
School of Engineering, The University of Tokyo
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Uragami T.
School Of Engineering The University Of Tokyo
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Mano T.
School Of Engineering The University Of Tokyo
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Fujioka H.
Department Of Applied Chemistry University Of Tokyo
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Mizuguchi M.
School Of Engineering The University Of Tokyo
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Oshima M
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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