Formation of MnAs Dots on S-Passivated GaAs (100) Substrates
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概要
- 論文の詳細を見る
We report the formation of nanosize ferromagnetic MnAs dots on S-passivated GaAs by molecular beam epitaxy. The structural and magnetic properties of the dots have been characterized by high resolution scanning electron microscopy, and superconducting quantum interference device magnetometer. The average size and the density of these MnAs dots were 16.3nm and 2.3×10^<10>/cm^3 respectively. These dots show ferromagnetism at low temperature and the Curie temperature is lower than the bulk value.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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FUJIOKA H.
Department of Applied Chemistry, University of Tokyo
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OSHIMA M.
Department of Applied Chemistry, University of Tokyo
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Watanabe Y.
NTT Laboratories
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TANAKA M.
School of Nursing, Kagoshima Immaculate Heart University
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Ono K.
School of Engineering, The University of Tokyo
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Uragami T.
School of Engineering, The University of Tokyo
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Mizuguchi M.
School of Engineering, The University of Tokyo
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Fujioka H.
School of Engineering, The University of Tokyo
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Oshima M.
School of Engineering, The University of Tokyo
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Uragami T.
School Of Engineering The University Of Tokyo
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Mano T.
School Of Engineering The University Of Tokyo
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Fujioka H.
Department Of Applied Chemistry University Of Tokyo
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Mizuguchi M.
School Of Engineering The University Of Tokyo
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Oshima M
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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