LiXSiO_4(X=Al,Y,La,Nd,Sm,Gd,Dy,Ho,Er,Yb)セラミックスの微細構造と電気特性

概要

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The microstructures and electrical properties for the LiXSiO_4(X=Al, Y, La, Nd, Sm, Gd, Dy, Ho, Er, Yb) ceramics were investigated. The XRD patterns of LiX SiO_4 were classified into three groups. The crystal system of the first group, LiXSiO_4 (X=La, Nd, Sm, Gd, Dy), was hexagonal. That of the second group, LiX SiO_4(X=Y, Ho, Er, Yb), was orthorhombic. That of the third group, LiAlSiO_4, was hexagonal. The particle sizes of LiNdSiO_4, LiSmSiO_4 and LiGdSiO_4 were 1-2 μn. The relative densities of LiLaSiO_4, LiNdSio_4 and LiSmSiO_4 were higher than 97%. The conductivities of LiXSiO_4 measured in the temperature region of 200° to 500℃. The conductivities for LiXSiO_4(X=Al, La, Nd, Sm, Gd, Dy) of the hexagonal system were higher than those for LiXSiO_4(X=Y, Ho, Er, Yb) of the orthorhombic system in the whole region. For LiSmSiO_4, the highest conductivity was obtained and that was 8.9×10^<-6> S・cm^<-1> at 300℃.
社団法人日本セラミックス協会の論文
1992-06-01