ICTS法によるZnOバリスタ界面準位の定量的評価

概要

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The interface states at the grain boundaries in ZnO varistors are quantitatively investigated by Isothermal Capacitance Transient Spectroscopy (ICTS). At first we describe the formulation of ICTS signals caused by the interface states, and then analyze the observed results. They were characterized as monoenergetic interface states laid at 0.77 eV below the conduction band. The density and the capture cross section of the interface states were calculated as 1.1×10^<12> cm^<-2> and 1.1×10^<-16> cm^2, respectively. The level of the interface states which capture electrons at zero-biased voltage was considered to be identical with that detected by ICTS measurements.
社団法人日本セラミックス協会の論文
1992-10-01