Pr系ZnOバリスタのC-t特性

概要

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C-t characteristics of ZnO varistors containing praseodymium oxide are examined. The effects of sintering temperature on the C-t characteristics are also discussed. C-t characteristics are found to be strongly connected with the electronic interface states at the grain boundaries and useful for characterizing the interface states. When samples were sintered below 1340℃, the interface states were discrete and monoenergetic at 0.8 eV below the conduction band edge. However, samples which were sintered above 1360℃ formed continuously distributed levels near 0.7 eV below the conduction band edge. Moreover, the density of states and varistor voltage per grain boundary rapidly increased in this temperature range. These phenomena were explained by the oxygen evolution from Pr_6O_<11> by the reduction to Pr_2O_3 during the sintering process.
社団法人日本セラミックス協会の論文
1992-08-01