シリコン半導体上におけるビスマス系層状構造強誘導体のリキッドソースを用いたケミカルアプローチ(<特集>セラミックスインテグレーション)

概要

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Ca_2Bi_4Ti_5O_<18> (CBTi245) thin films were deposited by spin-coating a precursor solution of metal alkoxides on Pt-passivated Si substrates. Thickness of the as-deposited amorphous layer affected the nucleation site, microstructure and electrical properties. The onset of crystallization of thin films to a pyrochlore phase was below 550℃ via rapid thermal annealing in oxygen. A perovskite phase developed by further annealing at temperatures of 650 or higher. The CBTi245 thin films which were prepared by multi-coating and multi-crystallizing of the 20 nm-thick amorphous layer showed random orientation, a columnar-like structure, and P-E hysteresis loops.
社団法人日本セラミックス協会の論文
2002-05-01