常圧CVD法による二酸化チタン多結晶膜の優先配向

概要

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Crystalline orientation and growth rate of titanium dioxide polycrystalline films deposited using an airopened chemical vapor deposition apparatus were investigated. The deposition rate of the titanium dioxide films depends on the substrate temperature and the vaporizing temperature of titanium tetra-isopropoxide. X-ray diffraction analysis revealed that the growth orientation of the films was mainly varied with the vaporizing temperature. At relatively low vaporizing temperature, the films were consisted of<001>-oriented columnar crystals grown at a minimum deposition rate of 4 nm/s. In contrast, <100>-and<211>-oriented crystallites grew with a maximum deposition rate of 45 nm/s at relatively high vaporizing temperature. These results suggest that the concentration of reactant, which is strongly dependent upon the vaporizing temperature, is one of factors which decide the growth rate of each crystal face.
1997-07-01