Chemical Pressure Effect for the SDW Phase in Heavy Fermion Ce(Ru_<0.85>Rh_<0.15>)_2Si_2 Compound(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

スポンサーリンク

概要

• 論文の詳細を見る

• Susceptibility measurements have been performed on polycrystalline samples Ce_<1-y>R_y(Ru_<0.85>Rh_<0.15>)_2-Si_2 (R=Sc, La) in order to clarify the chemical pressure effect for the SDW in the heavy fermion Ce(Ru_<0.85>Rh_<0.15>)_2Si_2. Lattice parameters a and c both decrease with increasing Sc concentration and increase with increasing La concentration. For Ce_<1-y>Sc_y(Ru_<0.85>Rh_<0.15>)_2Si_2 system, the Neel temperature T_N decreases with increasing Sc concentration and disappears for y≥0.2. We observed the Curie-Weiss law in the susceptibility at high temperature and a tendency of the saturation in the low temperature susceptibility. The tendency of the saturation and the Weiss temperature Θ determined from the high temperature susceptibility increase with increasing Sc concentration. These facts can be explained through the increase of the c-f hybridization and itinerancy of the f electron. For Ce_<1-y>La_y(Ru_<0.85>-Rh_<0.15>)_2Si_2 system, the T_N slightly decreases with increasing La concentration and the tendency of the saturation becomes weaker with increasing y and is no more observed down to T_N for y>0.15. The Θ rapidly decreases with increasing La concentration and becomes almost zero for y>0.15. These facts suggest that the c-f hybridization becomes weak with increasing y and that the itinerant AF phase for y<0.15 is replaced by the AF phase with the localized moment for y>0.15. The Kondo temperature T_K estimated from Θ is scaled by a single proportional function of the lattice parameter c in both cases for the Sc and La substitution.

• 社団法人日本物理学会の論文
• 2005-05-15

著者

• Murayama Shigeyuki

  Muroran Institute of Technology

• Nakano Tomohito

  Muroran Institute Of Technology:(present Address)institute For Solid State Physics University Of Tok

• Murayama Shigeyuki

  Muroran Institute Of Technology:(present Address)department Of Materials Science And Engineering Mur

• Fujita Kaoru

  Muroran Institute Of Technology

• YAMASHIRO Hirohumi

  Muroran Institute of Technology

• MURAYAMA Shigeyuki

  Muroran Institute of Technology:(Present address)Department of Materials Science and Engineering, Muroran Institute of Technology

• NAKANO Tomohito

  Muroran Institute of Technology:(Present address)Institute for Solid State Physics, University of Tokyo

関連論文

• Partial Gap of SDW in Ce (Ru_Rh_x)_2Si_2
• Chemical Pressure Effect for the SDW Phase in Heavy Fermion Ce(Ru_Rh_)_2Si_2 Compound(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Structures and Magnetic Properties of Hf_Ta_xFe_2 in Amorphization Process
• Thermal Expansion of Sputtered Amorphous (Hf, Te)Fe_2 Alloys
• Magnetic and Mossbauer Study of Sputtered Amorphous Alloys Hf_Ta_xFe_2
• Itinerant Electron Weak Ferromagnetism in Y_2Ni_7 and YNi_3

スポンサーリンク