Production of Ion Beams in Pinched-Electron-Beam Diode
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概要
- 論文の詳細を見る
A high power pulse generator Reiden III (500 kV, 120 kA) has beeat used toproduce light ion beams. Currents in excess of 2.5 kA with current density greaterthan 60 A/cm. have been produced in a 100 ns bursts at energy 200 ke'V using apinched REB diode. The measured ton-beam characteristics are in good a.greementwith fhenreficnl calcttlation
- 社団法人日本物理学会の論文
- 1980-10-15
著者
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Nakai Sadao
Institute of Laser Engineering, Osaka University
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YAMANAKA Chiyoe
Institute of Laser Engineering, Osaka University
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OZAKI Tetsuo
Institute of Plasma Physics, Nagoya University
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IMASAKI Kazuo
Institute for Laser Technology
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HIGAKI Satoshi
Institute of Laser Engineering, Osaka University
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中井 俊一
宇都宮大学工学部
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Ozaki T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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MIYAMOTO Shyuji
Institute of Laser Engineering, Osaka University
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Ozaki T
Hiroshima Univ. Higashi‐hiroshima
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Yamanaka Chiyoe
Inst. Laser Technol. Osaka Jpn
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Nakai Sadao
Institute Of Laser Engineering Osaka University
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Yamanaka C
Inst. Laser Technol. Osaka Jpn
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Miyamoto Shuji
Institute Of Laser Engineering Osaka University
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Ozaki T
Institute For Solid State Physics University Of Tokyo:(present Address)ntt Basic Research Laboratori
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Ozaki Tetsuo
Institute Of Plasma Physics Nagoya University
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Higaki Satoshi
Institute Of Laser Engineering Osaka University
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Yamanaka Chiyoe
Institute Of Laser Engineering
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Miyamoto S
Laboratory Of Advanced Science And Technology For Industry (lasti) University Of Hyogo
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Yamanaka Chiyoe
Institute For Laser Technology
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Nakai Sadao
Institute Of Laser Engineering Faculty Of Engineering Osaka University
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