Hopping Conduction of Heavily Compensated n-InSb in Magnetic Field
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概要
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Shklovskii derived an expression of the mnagneto-resistivity of lightly dopedsemiconductors in the variable range hopping region. According to his result theresistivity takes the form of 7tccexp {const. f2'a I. g(p)k.7'] "'} in strong magneticfield, where a.. denotes the field-dependent Bohr radius, 2 the magnetic lengthdefined by 2 = Vlc/eH and gap) is the density of states at the Fermi level p.However, the experiments carried out by Gershenzon et at. revealed that p ofhighly compensated o-InSb behaves quite differently frotn the Shklovskii'sprediction. Such discrepancy can be attributed to an assumption of constantdensity of states on which Shkjovskij's result is based. This assumption leads toan erroneous conclusion becatmse in the case of highly compensated samples thedensity of states is strongly energy-dependent.By extending the percolation theory to the strong magnetic field region andconsidering the energy-dependent density of states, a qualitative agreement withthe obset'ved data is obtained.
- 社団法人日本物理学会の論文
- 1978-10-15
著者
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Sugihara Ko
Central Research Laboratory Matsushita Electric Industrial Co.ltd.
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Sugihara Ko
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
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