The Resistivity Change due to ESR of Donor Electrons in P-doped Silicon at Intermediate Region of Impurity Conduction. I

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概要

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• The electron spin resonance in phosphorus doped silicon belonging to the intermediate region of impurity conduction, was detected by resistivity change at 24 GHz microwave frequency. Two types of the resonance were observed. The one makes the resistivity increase, and the other makes the resistivity decrease at resonance. These two types of resonance are considered to be due to the electrons belonging to the relatively high and low concentration regions of inhomogeneously distributed impurities in the crystal. At the intermediate region of impurity conduction, these two regions are considered to coexist in a crystal. It is shown that the resonance of electrons belonging to these two regions, can separately be detected by the type of experiments described in the paper.

• 社団法人日本物理学会の論文
• 1972-09-05

著者

• Toyoda Yukio

  Department Of Physics Nagoya University

• Hayashi Yoshikazu

  Department Of Internal Medicine Hokkaido Prefectural Haboro Hospital

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