The Band Structures of Alloy System Hg_<1-x>Cd_xTe Calculated by the Psedopotential Method
スポンサーリンク
概要
- 論文の詳細を見る
The band structures of alloy system Hg_<1-x>Cd_xTe are calculated at high symmetry points Γ, L, S, K and on symmetry lines ?, Λ, Σ by the use of the model potential of Animalu and Heine screened by penn's dielectric function. The parameter E_g in Penn's dielectric function is adfusted so as to make the resulting band structure be in agreement with certain known optical transition energies. The band structures of the alloy system change from the inverted band structure to the normal one as mole fraction of CdTe increases from 0 to 1. The critical mole fraction at which the semimetal-semicincuctor transition occurs is obtained as x_0=0.146 at 77K. The agreement with experiment is excellent. The detailed band structure in the vicinity of Γ point is also calculated and is found to be well described by Kane's expression. The effective masses at the extrema of the bands are evaluated in the full range of mole fraction. The values callculated are about twice the experimental values.
- 社団法人日本物理学会の論文
- 1971-08-05
著者
-
Kunimune Makoto
Fukuoka Women's University
-
Katsuki Shin-ichi
General Education Department Kyushu University
関連論文
- Transport Phenomena in Cadmium Single Crystal
- Effect of Pressure on the Band Structure of HgTe : Pseudopotential Calculation
- Effect of Screening Factor on the Band Structure of Cadmium Telluride
- Pressure Dependence of Energy Gap of HgTe
- The Band Structures of Alloy System Hg_Cd_xTe Calculated by the Psedopotential Method
- Calculation of Deformation Potentials in Bismuth
- Calculation of deformation Potentials in Bismuth
- The Band Structure of Bismuth Telluride
- The Band Structure of CdIn_2S_4 Calculated by the Pseudopotential Method