The Band Structure of CdIn_2S_4 Calculated by the Pseudopotential Method

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概要

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• The band structure of the spinel-type semiconductor CdIn_2S_4 has been calculated on the symmetry lines T-A-L, T-Δ-X, T-Σ-K by the empirical-pseudopotential method. The form factors of the potential are those empirically determined by Cohen and Bergstresser and modified by Meloni and Mula. No adjustable parameter has been used in the calculation. It is found that the the lowest energy gap of 2.43eV is indirect one from Σ_4 to T_1 and the direct gap of 2.5eV is from T_<15> to T_1. These values are in good agreement with available experimental information. The sensitivity of the energy levels has been also examined.

• 社団法人日本物理学会の論文
• 1972-12-05

著者

• KATSUKI Shin-ichi

  General Education Department of Kyushu University

• Katsuki Shin-ichi

  General Education Department Kyushu University

関連論文

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• Effect of Screening Factor on the Band Structure of Cadmium Telluride
• Pressure Dependence of Energy Gap of HgTe
• The Band Structures of Alloy System Hg_Cd_xTe Calculated by the Psedopotential Method
• Calculation of Deformation Potentials in Bismuth
• Calculation of deformation Potentials in Bismuth
• The Band Structure of Bismuth Telluride
• The Band Structure of CdIn_2S_4 Calculated by the Pseudopotential Method

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