Effect of Pressure on the Band Structure of HgTe : Pseudopotential Calculation

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概要

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• Pressure dependence of the band structure of HgTe is calculated by the use of the pseudopotential used in the calculation is Animalu-Heine's model potential which is angular-momentum dependent. Effect of the valence electron is taken into account by screening the ionic potential with Penn's dielectric function. To calculate the effect of the pressure the band structure, the angular-momentum dependence of the pseudopotential is found to be essential. Pressure dependence of effective masses for HgTe are calculated. The energy gaps of Hg_<1-x>Cd_xTe(0<x<0.15) is obtained to have similar behavior to that of HgTe.

• 社団法人日本物理学会の論文
• 1971-08-05

著者

• Kunimune Makoto

  Fukuoka Women's University

• KATSUKI Shin-ichi

  General Education Department of Kyushu University

• Katsuki Shin-ichi

  General Education Department Kyushu University

関連論文

• Transport Phenomena in Cadmium Single Crystal
• Effect of Pressure on the Band Structure of HgTe : Pseudopotential Calculation
• Effect of Screening Factor on the Band Structure of Cadmium Telluride
• Pressure Dependence of Energy Gap of HgTe
• The Band Structures of Alloy System Hg_Cd_xTe Calculated by the Psedopotential Method
• Calculation of Deformation Potentials in Bismuth
• Calculation of deformation Potentials in Bismuth
• The Band Structure of Bismuth Telluride
• The Band Structure of CdIn_2S_4 Calculated by the Pseudopotential Method

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