Far-Infrared Absorption Spectra of Sb-Doped Ge at Low Temperature

概要

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The concentration dependence of far-infrared absorption spectra of antimony-doped germanium with 6×10^<14> to 7×10^<16> cm^<-3>, has been investigated in the wavelength range of 100 μm to 1 mm. In the excitation spectra, a higher energy line broadens faster with impurity concentration that a lower one, and disappears. In addition, the excitation lines shift slightly their position to lower energies and broaden in the low energy side with increasing concentration. Above 5×10^<15> cm^<-3>, background absorption appears newly as a curve of gradual descent from the ionization limit toward low energies, and increases rapidly with concentration. This absorption spreads over the whole spectral range at 7×10^<16> cm^<-3>, which would be responsible to the bolometric action. A qualitative discussion of the concentration effects is given. For sample having a small thickness (&ihkap;100 μm), the doublet structure of the excitation spectra was observed to change by surface treatment.
社団法人日本物理学会の論文
1969-02-05