Annealing Behaviour of Kr Atoms in Kr-Implanted Aluminium
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概要
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The behaviour of Kr atoms implanted into aluminium at room temperature with a dose of 1 x 10^15 Kr/cm^2 has been investigated by a channelling method for isochronal annealing up to 683 K. In the as-implanted state the Kr atoms are distributed over tetrahedral (T), octahedral (O), substitutional (S) and random (R) sites. On annealing at 433 and 593 K, the T- and O-site occupancies disappear, respectively, and in both cases the fraction of the S-site occupancy decreases and that of the R-site occupancy increases. The T- and O-site occupancies have been interpreted to be a result of the formation of Kr-vacancy (V) complexes of KrV_4 and KrV_6, respectively, and the R-site occupancy to be Kr atoms associated with cavities. Therefore, the annealing stages at 433 and 593 K are explained in terms of the dissociation of KrV_4 and KrV_6, respectively. On annealing at 683 K, solid krypton is formed.
- 社団法人日本物理学会の論文
- 1995-03-15
著者
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YAGI Eiichi
The Institute of Physics and Chemical Research
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Yagi Eiichi
The Institute Of Physical And Chemical Research
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HACKE Marcus
The Institute of Physical and Chemical Research (RIKEN)
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