Xe Bubble Formation in Xe-Implanted Fe as Observed by the Channelling Method
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概要
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In order to investigate the initial stage of Xe bttblcle fornaat.ion in a-Fe, the lattice locat.ion ofXe atoraas has been studied by the channuelling method for the Fe crystals irnplanted with Xeions at 150 keV at 100111 teunperature Ulp to doses 10" 4 x 10" 10" and 10" Xe/cuaa'. Nlostof the Xe atoms are located at substitutional (.5) and randona (7?) sites. At loxv izmplantationdoses small portion of them are located at tetralaedral (V') sites and the sites slightly displacedfrona a lattice point by about 0.085 [1111 in tl'xe (111) direction (D site). Witla increasing implan-tation dose the fractions of .5- D- and T-site occtnpancies decrease, whereas that of t.he R-siteocctrpancy increases. These results strggest tluat at the initial stage of irnplantation Xe-vacancy(V) coraaplexes, i.e., XeV, X8V4 and larger oraes, are foruned and tlaey act as ntncleation centresfor the subseqttent growth to Xe btmbbles.
- 社団法人日本物理学会の論文
- 1999-12-15
著者
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YAGI Eiichi
The Institute of Physics and Chemical Research
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Yagi E
The Institute Of Physical And Chemical Research (riken)
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Yagi Eiichi
The Institute Of Physical And Chemical Research
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SASAHARA Takafumi
The Institute of Physical and Chemical Research (RIKEN)
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JOH Tetsuo
Department of Applied Physics,Okayama University of Science
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HACKE Marcus
The Institute of Physical and Chemical Research (RIKEN)
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URAI Teruo
The Institute of Physical and Chemical Research (RIKEN)
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SASAMOTO Tetsuji
The Institute of Physical and Chemical Research (RIKEN)
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TAJIMA Norio
The Institute of Physical and Chemical Research (RIKEN)
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WATANABE Tokuji
The Institute of Physical and Chemical Research (RIKEN)
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Sachio.T. NAKAGAWA
Department of Applied Physics,Okayama University of Science
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Hacke M
The Institute Of Physical And Chemical Research (riken)
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Joh Tetsuo
Department Of Applied Physics Okayama University Of Science
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Sasamoto T
Univ. Tokyo Tokyo
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Sachio.t. Nakagawa
Department Of Applied Physics Okayama University Of Science
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