Maximum Scintillation Yield in Nal (Tl)

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概要

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• The linear energy transfer (LET) dependence of the scintillation yield in liqtrid argon waspreviously obtained experitnentally over the xvide range f'rorau 1 to 10' IVIeV/g/cna' of LET. Inthe present paper, this LET dependence is cotaapared with that in Nal(Tl) given in tlae paperof lN4trrray and lVIeyer. Frona the siutailarity between the LET dependence of Nal(Tl) and thatof liqtrid argon, it is strggested that a flat top of the scintillation yield in Nal(Tl) gives thenaaxinutmrn scintillation yield. This taaaxiuaatrrn yield is due to a 1O0'./ recozaabination efficiencyof electron-hole pairs azud to each electron-hole pair recoznbination restzlting in one scintillationjohotora frorn the Tl activator. Based on this strggestion and the recent uaaeastrred ax'erage energy,the V'V'.-valtre, to prodtrce one scintillation photon in Nal(Tl) for xl IVIeV electrons by fvIiya.jiunaet at., the IN/,-valtre at the flat top in Nal(Tl) is obtained to be l2.4i.5p: eV. This value is inagreenaent with the 11".-vsrlues (10.5 x 10.7 or ll.4eV) calctrlated here by tlae Shockley uaaodel.

• 社団法人日本物理学会の論文
• 1999-07-15

著者

• DOKE Tadayoshi

  Advanced Research Institute for Science and Engineering, Waseda University

• Shibamura Eido

  College Of Health Science Saitama Prefectural University

• Shibamura E

  College Of Health Science Saitama Prefectural University

• Shibamura Eido

  Saitama Prefectural Univ.

• Doke T

  Advanced Research Institute For Science And Engineering Waseda University

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