Magnetoresistance of Uniaxially Stressed Germanium in Impurity Band Conduction Region

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概要

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• Magnetoresistance in the impurity band conduction has been measured on n- and p-type germanium. Large uniaxial stress is applied to remove the degeneracy of the conduction or valence band edge and to make the band structure simple. The magnetoresistance consists of three components: the negative anomalous magnetoresistance, the positive magnetoresistance having H^2 dependence, and the Shubnikov-de Haas effect. These components have anisotropies with respect to the magnetic field direction. The anisotropies and other properties of these components are discussed in terms of the parameters of the simplified conduction or valence band.

• 社団法人日本物理学会の論文
• 1967-01-05

著者

• Sugiyama Koichi

  Electrical Communication Laboratory

関連論文

• Recombination and Trapping Processes at Deep Centers in N-Type GaAs
• Properties of Surface Imperfections Produced on Germanium by Cleaning Treatments
• Piezoresistance and Magnetoresistance in Impurity Conduction of Germanium
• Piezoresistance in N-type Germanium at Low Temperatures
• Magnetoresistance of Uniaxially Stressed Germanium in Impurity Band Conduction Region
• Magnetoresistance in Impurity Band Condduction Region of Strained p-Type Germanium
• Magnetoresistance in Uniaxially Strained P-Type Germanium
• Piezoresistance of P-Type Germanium in Impurity Conduction Region

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