Piezoresistance of P-Type Germanium in Impurity Conduction Region

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概要

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• Piezoresistance at large uniaxial compression along [001] has been measured in impurity conduction region of In-doped germanium with nearly constant compensation ratios. Resistivity has been extrapolated to large stress limit, and the impurity separation dependence of resistivity under no stress and under large stress limit has been obtained. From this result the effective Bohr radius of acceptor ground-state wave function of the unstressed state has been estimated and compared with a value derived from a simple theory.

• 社団法人日本物理学会の論文
• 1964-07-05

著者

• Sugiyama Koichi

  Electrical Communication Laboratory

関連論文

• Recombination and Trapping Processes at Deep Centers in N-Type GaAs
• Properties of Surface Imperfections Produced on Germanium by Cleaning Treatments
• Piezoresistance and Magnetoresistance in Impurity Conduction of Germanium
• Piezoresistance in N-type Germanium at Low Temperatures
• Magnetoresistance of Uniaxially Stressed Germanium in Impurity Band Conduction Region
• Magnetoresistance in Impurity Band Condduction Region of Strained p-Type Germanium
• Magnetoresistance in Uniaxially Strained P-Type Germanium
• Piezoresistance of P-Type Germanium in Impurity Conduction Region

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