Recombination and Trapping Processes at Deep Centers in N-Type GaAs

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概要

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• Photoconductivity and photoluminescence have been measured for low resistivity n-type GaAs. Besides band-edge emission, broad low-energy emission bands having peaks at nearly 0.93eV, or at 1.01 and 1.26eV at low temperatures were observed. These emission bands arise from the recombination between electrons in the conduction band or in the donor impurity band and holes captured at the deep levels located at about 0.58, 0.50 and 0.25eV from the top of the valence band. The ratios of capture cross sections at the deep centers for electrons and holes S_n/S_p are 10^<-7>∼10^<-6> at 150∼300°K; for the levels at 0.58 and 0.50eV, S_n's increase with temperature, and the parameters in the expression S_n=S_<n0>exp(-E_b/kT) are evaluated as S_<n0>=10^<-21>∼10^<-20>cm^2 and E_b=0.007∼0.017eV. The origins of these deep centers are discussed.

• 社団法人応用物理学会の論文
• 1967-05-05

著者

• Sugiyama Koichi

  Electrical Communication Laboratory

関連論文

• Recombination and Trapping Processes at Deep Centers in N-Type GaAs
• Properties of Surface Imperfections Produced on Germanium by Cleaning Treatments
• Piezoresistance and Magnetoresistance in Impurity Conduction of Germanium
• Piezoresistance in N-type Germanium at Low Temperatures
• Magnetoresistance of Uniaxially Stressed Germanium in Impurity Band Conduction Region
• Magnetoresistance in Impurity Band Condduction Region of Strained p-Type Germanium
• Magnetoresistance in Uniaxially Strained P-Type Germanium
• Piezoresistance of P-Type Germanium in Impurity Conduction Region

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