Resistive Instabilities in Semiconductor Plasmas
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概要
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Resistive type instabilities in semiconductor plasmas with μ_e≫μ_k are studied in the microwave frequency range for the cases of B_0‖k and B_0⊥k. Instabilities are created by the slower waves (in the drifting electrons) that interact with the resistive holes. It is shown that the growing wave due to the instabilities starts to appear at a frequency well below the electron-lattice collision frequency v_e in both of the above cases-typically one tenth to one hundredth of v_e. The more specific conditions are given in the text.
- 1965-06-05
著者
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HASEGAWA Akira
Faculty of Engineering Science, Osaka University
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Hasegawa Akira
Faculty Of Engineering Science Osaka University
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