マイクロ波グロー放電CVDによるa-Si:H薄膜の生成

概要

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Microwave plasma of SiH_4/H_2 gas has been produced by glow discharge in direction of microwave propagation along a ridge waveguide and investigated by observing distribution of optical emission from the plasma. 0ptimum position of gas inlet has been obtained. Deposited film posseses more or less microcrystalline phase, but its photoelectric property differs whether it is prepared inside or outside the plasma. Photoelectric property of the film obtained inside the plasma is poor but it is improved by hydrogenation or intermittent discharge. The film obtained outside the plasma has fairly good photoelectric property and growth rate of 20Å/s. It is postulated that the former film is affected by high substrate temperature and the latter is grown partly by chemical transport.