D-D 形 D^2CMOS (Dual Depletion CMOS) 連想メモリセルの直流特性

概要

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An associative memory cell requires, in additio to functions required for conventional RAM cells, a function of interrogating its input information and stored information. These requirements increase the number of transistors per bit, and cause the problem of increasing the cell area where transistors are integrated. This paper proposes a new static MOS associative memory cell using the lambda diode. The cell consists of six transistors, so that the cell area can be significantly reduced in contrast to the conventional static MOS associative memory cells. The static characteristics (memory, writing, reading and interrogation) of the cell are also analyzed by using the state diagram method. The results of the analysis agree fairly well with the results of the simulation using the computer circuit analysis program SPICE 2.
東海大学の論文