状態図法によるE-D形CMOS連想メモリセルの直流解析

概要

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Recently, the utility of associative memory in a wide variety of computer systems has been recognized, and such memory systems have been realized in semiconductor technologies. In these memory systems, static MOS associative memory cells have especially the advantages of the simpler peripheral circuits, stabler storage and lower power dissipation. This paper describes a new static MOS associative memory cell using complementary transistors. The cell consists of seven transistors, and the crossovers between the interconnections necessary for the feedback in the cell are avoided, so that the cell area can be significantly reduced in contrast to the conventional static MOS associative memory cells. The static characteristics (memory, writing, reading and interrogation) of the cell are also analyzed by using the state diagram method. The theoretical results have coincidence with simulated results using the computer circuit analysis program SPICE 2.
東海大学の論文