Research on a hole transport layer of organic EL devices

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Effects of perylene concentration on luminous characteristics of poly (N-vinylcarbazole) based organic EL device
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Interannual Variations in the summer Secchi Disk Transparency of Harima-Nada from 1974 to 1988
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Bias Effects on Preparation of Doped Amorphous Silicon in a Triode Glow Discharge
High Rate Deposition of a-Si : H Films in a Triode Glow Discharge System
Bias Effects on Glow Discharge Deposition of a-Si : H Film from Silane-argon Mixtures
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Photoluminescence of ZnS:Mn thin-film EL device active layer : influence of H2 gas in sputtering atomsphere
Application of plasma-polymerized p-xylene thin film to organic EL device
Effects of H2 gas in sputtering ambient on pulse voltage response of ZnS:Mn electroluminescent device
Effects of evaporation condition on luminous characteristics of a single layer EL device
Organic thin film EL device with plasma-polymerized N-ethylcarbazole as hole transport layer
Effects of H_2 Gas in sputtering ambience on ZnS:Mn electroluminescent device active layer
Research on a hole transport layer of organic EL devices
Electrical characteristics of fullerene films
Optical emission spectroscopy of rf-magnetron sputtering plasma for fabrication of ZnS:Mn active layer in thin-film EL devices
Preparation and Electrical Properties of Plasma-Polymerized Hexamethyldisilazane Films
Characterization of Zinc Sulfide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
Fine Structures in Stationary and Non-Stationary Chaos : Numerical Approach to the Law of Large Number : Condensed Matter and Statistical Physics
Electrical Breakdown Strength of Al_2O_3 Si_3N_4 and SiAlON Insulating Films Prpared by rf-magnetron Sputtering
Effect of Carbon Contaminantin ZnS : Mn Electroluminesecent Device Active Layer
CaS:Eu, F Thin Film Electroluminescent Devices Prepared by RF Sputtering with Hydrogen-Argon Mixture Gas
CaS : EuF_3 Thin Film Electroluminescent Devices Prepared by RF-Magnetron Sputtering
Mn centers in Zns : Mn thin-film EL device active layer
Mn^2^+ centers in Zns:Mn thin-film EL device active layer

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