High Rate Deposition of a-Si : H Films in a Triode Glow Discharge System
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- Effects of perylene concentration on luminous characteristics of poly (N-vinylcarbazole) based organic EL device
- Bias Effects on Morphology and Growth Rate of Glow Discharge a-Si:H Films in a Triode System
- Bias Effects on Preparation of Doped Amorphous Silicon in a Triode Glow Discharge
- High Rate Deposition of a-Si : H Films in a Triode Glow Discharge System
- Bias Effects on Glow Discharge Deposition of a-Si : H Film from Silane-argon Mixtures
- Preparation of a-Si : H Film by the Triode Glow Discharge System
- Photoluminescence of ZnS:Mn thin-film EL device active layer : influence of H2 gas in sputtering atomsphere
- Application of plasma-polymerized p-xylene thin film to organic EL device
- Effects of H2 gas in sputtering ambient on pulse voltage response of ZnS:Mn electroluminescent device
- Effects of evaporation condition on luminous characteristics of a single layer EL device
- Organic thin film EL device with plasma-polymerized N-ethylcarbazole as hole transport layer
- Effects of H_2 Gas in sputtering ambience on ZnS:Mn electroluminescent device active layer
- Research on a hole transport layer of organic EL devices
- Electrical characteristics of fullerene films
- Optical emission spectroscopy of rf-magnetron sputtering plasma for fabrication of ZnS:Mn active layer in thin-film EL devices
- Preparation and Electrical Properties of Plasma-Polymerized Hexamethyldisilazane Films
- Characterization of Zinc Sulfide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Electrical Breakdown Strength of Al_2O_3 Si_3N_4 and SiAlON Insulating Films Prpared by rf-magnetron Sputtering
- CaS:Eu, F Thin Film Electroluminescent Devices Prepared by RF Sputtering with Hydrogen-Argon Mixture Gas
- CaS : EuF_3 Thin Film Electroluminescent Devices Prepared by RF-Magnetron Sputtering