Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
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概要
- 論文の詳細を見る
- 2013-04-25
著者
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Privitera Vittorio
Cnr-imm Catania
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Impellizzeri Giuliana
Cnr-imm Matis And Dipartimento Di Fisica E Astronomia Universita Di Catania
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Carnera Alberto
Dipartimento Di Fisica 'galileo Galilei' Universita Di Padova
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Napolitani Enrico
CNR-IMM MATIS at Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova, Italy
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Giarola Marco
Dipartimento di Informatica, Università di Verona, Strada le Grazie 15, I-37134 Verona, Italy
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Sanson Andrea
Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova, Italy
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Mariotto Gino
Dipartimento di Informatica, Università di Verona, Strada le Grazie 15, I-37134 Verona, Italy
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PRIVITERA Vittorio
CNR-IMM MATIS at Dipartimento di Fisica e Astronomia, Universita di Catania
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- Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy