Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 2012-03-25
著者
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Romano Lucia
Cnr-imm Matis And Dipartimento Di Fisica E Astronomia Universita Di Catania
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Spinella Corrado
Cnr-imm
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Impellizzeri Giuliana
Cnr-imm Matis And Dipartimento Di Fisica E Astronomia Universita Di Catania
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BOSCO Lorenzo
Scuola Superiore di Catania
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GRIMALDI Maria
CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania
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Grimaldi Maria
Cnr-imm Matis And Dipartimento Di Fisica E Astronomia Universita Di Catania
関連論文
- Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy