Electrical Properties of Ultrathin SiO_2 Layer Deposited at 50℃ by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 2012-02-25

著者

• Ruggeri Rosa

  Dipartimento Di Fisica E Ingegneria Elettronica Universita Di Messina

• ALBERTI Alessandra

  CNR-IMM

• Privitera Vittorio

  Cnr-imm Catania

• MANNINO Giovanni

  CNR-IMM Catania

• FORTUNATO Guglielmo

  CNR-IMM Roma

• MAIOLO Luca

  CNR-IMM Roma

関連論文

• Electrical Properties of Ultrathin SiO_2 Layer Deposited at 50℃ by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition
• Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts
• Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
• Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

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