Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC
スポンサーリンク
概要
- 論文の詳細を見る
- 2011-11-25
著者
-
Tian Yong-lai
Lt Technologies
-
Rao Mulpuri
Electrical And Computer Engineering Department George Mason University
-
Nath Anindya
Electrical And Computer Engineering Department George Mason University
-
Hallen Anders
Royal Institute Of Technology Kth School Of Ict
-
NIPOTI Roberta
CNR-IMM of Bologna
-
CARNERA Alberto
Dipartimento di Fisica 'Galileo Galilei', Universita di Padova
-
Carnera Alberto
Dipartimento Di Fisica 'galileo Galilei' Universita Di Padova
関連論文
- Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy