Material Dependence of Thermally Assisted Magnetization Reversal Properties in Microstructured Co/Pd Multilayers
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概要
- 論文の詳細を見る
Using extraordinary Hall resistance ($R_{\text{H}}$) measurements, the material dependence of thermally assisted magnetization reversal (TAMR) was investigated for microstructured multilayers of [Co (0.17 nm)/Pd (0.80 nm)]N with $N = 7$ and 20, which exhibit markedly different magnetic properties. The threshold values of the external field ($H_{\text{w,th}}$) necessary for controlling the magnetization direction in TAMR, obtained by direct application of a current pulse to the sample, were 220 Oe for the $N = 7$ and 710 Oe for $N = 20$ samples. The values of $H_{\text{w,th}}$ are found to be related to the magnetization saturation field at a critical temperature at which apparent coercivity decays.
- Japan Society of Applied Physicsの論文
- 2009-03-25
著者
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Nozaki Yukio
Department of Electronic Device Engineering, Kyushu University
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Matsuyama Kimihide
Department of Electronic Device Engineering, Kyushu University
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Nozaki Yukio
Department Of Electronics Kyushu University
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Tanaka Terumitsu
Department Of Electronics Kyushu University
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Purnama Budi
Department of Electronics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Matsuyama Kimihide
Department Of Electrical Engineering Kyushu University
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Purnama Budi
Department Of Electronics Kyushu University
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Tanaka Terumitsu
Department Of Cardiovascular Medicine Division Of Bioinformatics And Chemical Genomics Graduate Scho
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