Magnetic and Electric Properties of Fe_3O_4 Thin Films Sputtered on Metallic Underlayer(<Special Section>Recent Progress in Oxide Thin Films by Sputtering)

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概要

• 論文の詳細を見る

• High-quality Fe_3O_4 thin films have been fabricated onto metallic underlayers of Cr/Cu and Al by if-magnetron sputtering at low substrate temperatures (<573 K). The measured saturation magnetizations M_s are 462 emu/cm^3 for Al (50 nm)/Fe_3O_4 (200 nm) and 422 emu/cm^3 for Cr (45 nm)/Cu (300nm)/Fe_3O_4 (200nm), which are markedly enhanced compared with that for the reference sample deposited directly on a glass substrate, and practically comparable to the bulk value of 477 emu/cm^3. Highly conductive transport with an order-disorder change of the Verwey transition was observed in the current-perpendicular-to-plane geometry. The order of decrease in coercive field was achieved by exchange coupling with an overlaid NiFe layer.

• 社団法人電子情報通信学会の論文
• 2004-02-01

著者

• Nozaki Yukio

  Department of Electronic Device Engineering, Kyushu University

• Nozaki Y

  Department Of Electronics Kyushu University

• QIN Fei

  Department of Electronics, Kyushu University

• MATSUYAMAta Kimihide

  Department of Electronics, Kyushu University

• Qin Fei

  Department Of Electronics Kyushu University

• Matsuyamata Kimihide

  Department Of Electronics Kyushu University

関連論文

• Magnetic domain structure of micron-size Co line arrays
• Material Dependence of Thermally Assisted Magnetization Reversal Properties in Microstructured Co/Pd Multilayers
• Magnetic and Electric Properties of Fe_3O_4 Thin Films Sputtered on Metallic Underlayer(Recent Progress in Oxide Thin Films by Sputtering)
• Experiments on Microwave-Assisted Magnetization Reversal in a Submicron-Scale Permalloy Single Element with a Zero-Field Resonance Frequency of 6.3 GHz
• Numerical Analysis of Successive Ballistic Rotations of Magnetization Caused by an Application of Sinusoidal Magnetic Fields
• Electrical Demonstration of Spin-Wave Logic Operation

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