Two-Dimensional Electron Gas Switching in an Ultra Thin Epitaxial ZnO Layer on a Ferroelectric Gate Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
Shimada Yasuhiro
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
-
Shimada Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
KANEKO Yukihiro
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
TANAKA Hiroyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
KATO Yoshihisa
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
Kato Yoshihisa
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Kaneko Yukihiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Tanaka Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
関連論文
- Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch(Integrated Electronics)
- Two-Dimensional Electron Gas Switching in an Ultra Thin Epitaxial ZnO Layer on a Ferroelectric Gate Structure
- Overview and Future Challenge of Ferroelectric Random Access Memory Technologies
- NOR-Type Nonvolatile Ferroelectric-Gate Memory Cell Using Composite Oxide Technology
- Lithographic Performance of Extreme Ultravolet Full-Field Exposure Tool at Selete
- Extreme Ultraviolet Lithography Using Small-Field Exposure Tool: Current Status
- Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology
- Electron Backscatter Diffraction Analysis for Polarization of SrBi2(Ta,Nb)2O9 Ferroelectric Capacitors in Submicron Small Area