Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch(Integrated Electronics)

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概要

• 論文の詳細を見る

• We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi_2(Ta,Nb)_2O_9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5ns at a drive voltage of 1.3V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.

• 社団法人電子情報通信学会の論文
• 2006-09-01

著者

• Shimada Yasuhiro

  Matsushita Electric Industrial Co. Ltd. Osaka Jpn

• Shimada Yasuhiro

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Kato Yoshihisa

  Matsushita Electric Industrial Company Semiconductor Company Semiconductor Device Research Center

• Yamada Takayoshi

  Matsushita Electric Industrial Company Semiconductor Company Semiconductor Device Research Center

• KOYAMA Shinzo

  Matsushita Electric Industrial Company, Semiconductor Company, Semiconductor Device Research Center

• Koyama Shinzo

  Matsushita Electric Industrial Company Semiconductor Company Semiconductor Device Research Center

関連論文

• Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch(Integrated Electronics)
• Two-Dimensional Electron Gas Switching in an Ultra Thin Epitaxial ZnO Layer on a Ferroelectric Gate Structure
• Overview and Future Challenge of Ferroelectric Random Access Memory Technologies
• Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology
• Electron Backscatter Diffraction Analysis for Polarization of SrBi2(Ta,Nb)2O9 Ferroelectric Capacitors in Submicron Small Area

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