Kato Yoshihisa | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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概要
- KATO Yoshihisaの詳細を見る
- 同名の論文著者
- Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.の論文著者
関連著者
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Kato Yoshihisa
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Shimada Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Kaneko Yukihiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Kaibara Kazuhiro
Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Kaibara Kazuhiro
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Shimada Yasuhiro
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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KANEKO Yukihiro
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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TANAKA Hiroyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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KATO Yoshihisa
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Yamada Takayoshi
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Uchiyama Kiyoshi
Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Tanaka Keisuke
Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Shimada Yasuhiro
Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Koyama Shinzo
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Isogai Kazunori
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Kaneko Yukihiro
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Kaneko Yukihiro
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Kaneko Yukihiro
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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Tanaka Hiroyuki
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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Tanaka Hiroyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Shimada Yasuhiro
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Shimada Yasuhiro
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Kato Yoshihisa
Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Kato Yoshihisa
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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Kato Yoshihisa
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Takatsuki, Osaka 569-1193, Japan
著作論文
- Two-Dimensional Electron Gas Switching in an Ultra Thin Epitaxial ZnO Layer on a Ferroelectric Gate Structure
- Overview and Future Challenge of Ferroelectric Random Access Memory Technologies
- NOR-Type Nonvolatile Ferroelectric-Gate Memory Cell Using Composite Oxide Technology
- Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology
- Electron Backscatter Diffraction Analysis for Polarization of SrBi2(Ta,Nb)2O9 Ferroelectric Capacitors in Submicron Small Area