Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
Walbert J.
Ramtron International Corporation
-
Aggarwal S.
Texas Instruments Inc.
-
Rodriguez J.
Texas Instruments Inc.
-
MOISE T.
Texas Instruments
-
SUMMERFELT S.
Texas Instruments
-
Moise T.
Texas Instruments Inc.
-
Schauer N.
Texas Instruments Inc.
-
Summerfelt S.
Texas Instruments Inc.
-
UDAYAKUMAR K.
Texas Instruments Inc.
-
CELII F.
Texas Instruments Inc.
-
SHINN G.
Texas Instruments Inc.
-
BOKU K.
Texas Instruments Inc.
-
REMACK K.
Texas Instruments Inc.
-
HAIDER A.
Texas Instruments Inc.
-
ANDERSON D.
Texas Instruments Inc.
-
GERTAS J.
Texas Instruments Inc.
-
OBENG Y.
Texas Instruments Inc.
-
ALBRECHT G.
Texas Instruments Inc.
-
MARTIN J.
Texas Instruments Inc.
-
KHAN B.
Texas Instruments Inc.
-
MCADAMS H.
Texas Instruments Inc.
-
MADAN S.
Texas Instruments Inc.
-
MCKERROW A.
Texas Instruments Inc.
-
ELIASON J.
Ramtron International Corporation
-
GROAT J.
Ramtron International Corporation
-
BAILEY R.
Ramtron International Corporation
-
FOX G.
Ramtron International Corporation
-
JABILLO E.
Ramtron International Corporation
関連論文
- 新冗長方式搭載の1T1C 1MビットFRAMの開発 (メモリ・混載メモリ及びIC一般)
- Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process
- Hydrogen-Robust Submicron IrO_x/PZT/Ir Capacitors for Embedded Ferroelectric Memory
- Manufacturable High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process
- Bit Distribution and Reliability of High Density 1.5V FRAM Embedded with 130nm, 5LM Copper CMOS Logic
- Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory
- Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process