Hydrogen-Robust Submicron IrO_x/PZT/Ir Capacitors for Embedded Ferroelectric Memory

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Wills L.

  Agilent Technologies

• SAKODA T.

  Texas Instruments

• MOISE T.

  Texas Instruments

• SUMMERFELT S.

  Texas Instruments

• COLOMBO L.

  Texas Instruments

• XING G.

  Texas Instruments

• GILBERT S.

  Agilent Technologies

• LOKE A.

  Agilent Technologies

• MA S.

  Agilent Technologies

• KAVARI R.

  Agilent Technologies

• AMANO J.

  Agilent Technologies

関連論文

• Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process
• Hydrogen-Robust Submicron IrO_x/PZT/Ir Capacitors for Embedded Ferroelectric Memory
• Manufacturable High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process
• Bit Distribution and Reliability of High Density 1.5V FRAM Embedded with 130nm, 5LM Copper CMOS Logic

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