Highly Reliable 0.15μm/14F^2 Cell FRAM Capacitor using SrRuO_3 Buffer Layer
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Lee J.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Chung U.-in.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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PARK S.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
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KIM H.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
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Moon J.
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim H.-j.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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HEO J.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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BAE B.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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YOO D.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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NAM S.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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LIM J.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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IM D.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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CHUNG U.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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Heo J.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Im D.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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PARK S.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
関連論文
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- Preparation and Characterization of Iridium Oxide Thin Films by DC Reactive Sputtering
- Highly Reliable 0.15μm/14F^2 Cell FRAM Capacitor using SrRuO_3 Buffer Layer
- Effects of post-deposition anneal on the electrical properties in HfSiO films grown by atomic layer deposition