新規強磁性自由層を用いたMRAMの磁化反転ばらつきの改善

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概要

論文の詳細を見る
2004-09-21

著者

Lee J.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
Chung U.-in.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
Bae J.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
NAM K.-T.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
OH S.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
HA Y.
Process Development Team, Advanced Process development PT, Samsung Electronics co., ltd.
KIM H.-J.
Process Development Team, Advanced Process development PT, Samsung Electronics co., ltd.
PARK S.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
KIM H.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
MOON J.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
Nam K.-t.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
Oh S.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
Moon J.
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
Kim H.-j.
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
PARK S.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.

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