Effects of post-deposition anneal on the electrical properties in HfSiO films grown by atomic layer deposition
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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PARK S.
Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
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Cho H.-j.
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang S.
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon J.
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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CHUNG U.
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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LEE H.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK H.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JEON T.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JIN B.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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SHIN Y.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Jeon T.
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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PARK S.
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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