Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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ISHIDA M.
Department of Physics, Tokyo Institute of Technology
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MIYAMOTO Y.
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Nakagawa R.
Department of Pediatrics, University Hospital of Tokushima
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Furuya K.
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kashima I.
Department Of Oral And Maxillofacial Radiology Kanagawa Dental College
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Kashima I.
Department Of Physical Electronics Tokyo Institute Of Technology
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