Influence of impurities on the estimation of the Phase coherent length of electrons in resonant tunneling diodes
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概要
- 論文の詳細を見る
Electron devices based on the wave nature of electrons offer great potential for the next generation of electronic components. However there are many technical obstacles to be overcome before such devices can be realized. A fundamental limitation is the phase coherent length,the distance over which an electron retains its phase information. In an attempt to measure the phase coherent length,our research has focused on measuring the IV characteristics of resonant tunneling diodes,the phase coherent length being estimated from the second derivative of the IV characteristics with respect to applied voltage. The work attempts to take into account the effect of well impurities, which if ignored may cause the phase coherent length to be underestimated.
- 一般社団法人電子情報通信学会の論文
- 1995-03-27
著者
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Kang Y.
Department Of Medicine University Of Louisville:pharmacology And Toxicology University Of Louisville
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Furuya K.
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kikegawa N.
Department Of Electronic Engineering Tokyo Institute Of Technology
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Gault M.
Department of Electronic Engineering Tokyo Institute of Technology
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Machida N.
Department of Electronic Engineering Tokyo Institute of Technology
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Mawby P.
Department of Electronic Engineering Tokyo Institute of Technology
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Gault M
Department Of Electronic Engineering Tokyo Institute Of Technology
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KANG Y.
Department of Chemical Engineering, Konkuk University
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