フラッシングスプレーCVD法を用いたHfO_2薄膜の作成

概要

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The authors proposed the novel evaporation supply method, flashing spray chemical vapor deposition (FS-CVD). In the experiment, tetrakisethylmethylamidohafnium (TEMAH) was used as the precursor and n-pentane was used as the low boiling point organic solvent. The critical consolute temperature of TEMAH and n-pentane mixed material solution was 276K. The vapor pressure of the mixed material solution was ten times higher than that of TEMAH by formation of two-phase region. HfO2 film was deposited on Si wafer by using TEMAH and n-pentane with FS-CVD. As the result, the uniformity of HfO2 film was +/-5% and film thickness was 133.6nm. The uniformity of HfO2 film of refractive index was +/-5% and refractive index was 1.63. It is found that the precursor was evaporated by flash boiling and HfO2 film was deposited by decomposition.
社団法人電気学会の論文
2008-06-01